advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -100v simple drive requirement r ds(on) 180m fast switching characteristic i d -2.7a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without n otice thermal data parameter drain current, v gs @ 10v 3 -2.1 pulsed drain current 1 -10 total power dissipation operating junction temperature range storage temperature range parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 ap18p10gm-hf rating 201501082 halogen-free product 1 -100 + 20 -2.7 2.5 -55 to 150 -55 to 150 s s s g d d d d so-8 g d s ap18p10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial-ind ustrial surface mount applications using infrared reflow techniqu e and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-2a - - 180 m v gs =-4.5v, i d =-1a - - 210 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-2a - 8.4 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-2a - 14 22.4 nc q gs gate-source charge v ds =-50v - 4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 7 - nc t d(on) turn-on delay time v ds =-50v - 10 - ns t r rise time i d =-1a - 5 - ns t d(off) turn-off delay time r g =3.3 - 55 - ns t f fall time v gs =-10v - 22 - ns c iss input capacitance v gs =0v - 1500 2400 pf c oss output capacitance v ds =-25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-2a, v gs =0v, - 40 - ns q rr reverse recovery charge di/dt=-100a/s - 75 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board,t < 10sec ; 125 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. ap18p10gm-hf 2
ap18p10gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 0 4 8 12 16 20 24 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0 4 8 12 16 20 0 2 4 6 8 10 12 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -5.0v -4.5v v g = - 3.0v t a = 150 o c 120 130 140 150 160 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = - 2 a t a =25 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = - 2 a v g =-10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
ap18p10gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0 10 20 30 40 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2a v ds = -50v 0 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on)
ap18p10gm-hf marking information 5 18p10gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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